B. Hu

Kott, T. M., Hu, B. H., Brown, S. H., & Kane, B. E. (2014). Valley-degenerate two-dimensional electrons in the lowest Landau level. Physical Review B, 89. http://doi.org/10.1103/PhysRevB.89.041107

Hu, B. H., Ochoa, E. D., Sanchez, D. ., Perron, J. K., Zimmerman, N. M., & Stewart, M. D. (2018). Effect of device design on charge offset drift in Si/SiO2 single electron devices. Journal of Applied Physics, 124. http://doi.org/10.1063/1.5048013

Hu, B. H., Yazdanpanah, M. M., Kane, B. E., Hwang, E. H., & Das Sarma, S. . (2015). Strongly Metallic Electron and Hole 2D Transport in an Ambipolar Si-Vacuum Field Effect Transistor. Physical Review Letters, 115. http://doi.org/10.1103/PhysRevLett.115.036801