M. Stewart

Norimoto, S. ., See, P. ., Schoinas, N. ., Rungger, I. ., Boykin, T. ., Stewart, M. D., … Kataoka, M. . (2024). Statistical study and parallelization of multiplexed single-electron sources. Applied Physics Letters, 125. http://doi.org/10.1063/5.0225998 (Original work published September 2024)

Wyrick, J. ., Wang, X. Q., Kashid, R. V., Namboodiri, P. ., Schmucker, S. W., Hagmann, J. A., … Silver, R. M. (2019). Atom-by-Atom Fabrication of Single and Few Dopant Quantum Devices. Advanced Functional Materials, 29. http://doi.org/10.1002/adfm.201903475

Wang, X. Q., Wyrick, J. ., Kashid, R. V., Namboodiri, P. ., Schmucker, S. W., Murphy, A. ., … Silver, R. M. (2020). Atomic-scale control of tunneling in donor-based devices. Communications Physics, 3. http://doi.org/10.1038/s42005-020-0343-1

Stein, R. M., & Stewart, M. D. (2020). The effect of strain on tunnel barrier height in silicon quantum devices. Journal of Applied Physics, 128. http://doi.org/10.1063/5.0010253

Perron, J. K., Gullans, M. J., Taylor, J. M., Stewart, M. D., & Zimmerman, N. M. (2017). Valley blockade in a silicon double quantum dot. Physical Review B, 96. http://doi.org/10.1103/PhysRevB.96.205302 (Original work published November 2017)

Perron, J. K., Stewart, M. D., & Zimmerman, N. M. (2015). A quantitative study of bias triangles presented in chemical potential space. Journal of Physics-Condensed Matter, 27. http://doi.org/10.1088/0953-8984/27/23/235302

Perron, J. K., Stewart, M. D., & Zimmerman, N. M. (2016). A new regime of Pauli-spin blockade. Journal of Applied Physics, 119. http://doi.org/10.1063/1.4945393

Koppinen, P. J., Stewart, M. D., & Zimmerman, N. M. (2013). Fabrication and Electrical Characterization of Fully CMOS-Compatible Si Single-Electron Devices. Ieee Transactions on Electron Devices, 60, 78–83. http://doi.org/10.1109/ted.2012.2227322

Kalantre, S. S., Zwolak, J. P., Ragole, S. ., . Y. Wu, X. ., Zimmerman, N. M., Stewart, M. D., & Taylor, J. M. (2019). Machine learning techniques for state recognition and auto-tuning in quantum dots. Npj Quantum Information, 5. http://doi.org/10.1038/s41534-018-0118-7 (Original work published January 2019)

Hu, B. H., Ochoa, E. D., Sanchez, D. ., Perron, J. K., Zimmerman, N. M., & Stewart, M. D. (2018). Effect of device design on charge offset drift in Si/SiO2 single electron devices. Journal of Applied Physics, 124. http://doi.org/10.1063/1.5048013