A.
F.
Rigosi
Kruskopf, M. ., Rigosi, A. F., Panna, A. R., Patel, D. K., Jin, H. ., Marzano, M. ., … Elmquist, R. E. (2019). Two-Terminal and Multi-Terminal Designs for Next-Generation Quantized Hall Resistance Standards: Contact Material and Geometry. Ieee Transactions on Electron Devices, 66, 3973–3977. http://doi.org/10.1109/ted.2019.2926684
Jarrett, D. G., Oe, T. ., Elmquist, R. E., Kaneko, N. H., Rigosi, A. F., . Y. Wu, B. ., … Yang, Y. F. (2018). Transport of NIST Graphene Quantized Hall Devices and Comparison with AIST Gallium-Arsenide Quantized Hall Devices. In .
Hu, J. N., Kruskopf, M. ., Yang, Y. F., . Y. Wu, B. ., Tian, J. F., Panna, A. ., … Newell, D. B. (2018). Epitaxial Graphene p-n Junctions. In .
Hu, J. N., Rigosi, A. F., Kruskopf, M. ., Yang, Y. F., . Y. Wu, B. ., Tian, J. F., … Newell, D. B. (2018). Towards epitaxial graphene p-n junctions as electrically programmable quantum resistance standards. Scientific Reports, 8. http://doi.org/10.1038/s41598-018-33466-z
Hu, J. N., Rigosi, A. F., Lee, J. U., . Y. Lee, H. ., Yang, Y. F., Liu, C. I., … Newell, D. B. (2018). Quantum transport in graphene p-n junctions with moire superlattice modulation. Physical Review B, 98. http://doi.org/10.1103/PhysRevB.98.045412
Hill, H. M., Rigosi, A. F., Chowdhury, S. ., Yang, Y. F., Nguyen, N. V., Tavazza, F. ., … Walker, A. R. H. (2017). Probing the dielectric response of the interfacial buffer layer in epitaxial graphene via optical spectroscopy. Physical Review B, 96. http://doi.org/10.1103/PhysRevB.96.195437