Abstract
We report the fabrication and measurement of top gated epitaxial graphene p-n junctions where exfoliated hexgonal boron nitride (hBN) is used as the gate dielectric. The four terminal longitudinal resistance across a single junction is well quantized at RK-90 (= 25812.807 Omega) with a relative uncertainty of 10(-7). Our work opens the possibility to realize programmable electrical resistance standards using external gating.
Year of Publication
2018
Group