Quantum dots formed in silicon heterostructures have emerged as a promising candidate for creating qubits, the building blocks of quantum computing. Their small size, ease of control, and compatibility with modern semiconductor processes make them especially enticing. However, the intrinsic near-degeneracy (valley splitting) of the conduction band electrons that form these quantum dots poses a serious concern for the viability of these qubits, but may also hold the solution. In this talk, I will discuss our efforts to understand, modify, control, and utilize the valley splitting in silicon / silicon germanium quantum dots to make better, longer lasting qubits.
