We summarize our earlier research showing how the radiative properties of an individual InAs quantum dot exciton state can be altered by their spatial and spectral position with respect to a discrete semiconductor microcavity mode. The InAs quantum dot is formed epitaxially in GaAs, and the microcavity is processed from a one-wavelength distributed Bragg reflector planar microcavity of GaAs and AlAs to form a sub-micrometer diameter pillar. Two states are tuned through a discrete cavity mode through sample temperature changes and show a spontaneous emission enhancement of 4. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.