N. Zimmerman

Zimmerman, N. M., Huang, P. H., & Culcer, D. . (2017). Valley Phase and Voltage Control of Coherent Manipulation in Si Quantum Dots. Nano Letters, 17, 4461–4465. http://doi.org/10.1021/acs.nanolett.7b01677

Thorbeck, T. ., & Zimmerman, N. M. (2015). Formation of strain-induced quantum dots in gated semiconductor nanostructures. Aip Advances, 5. http://doi.org/10.1063/1.4928320

Thorbeck, T. ., Fujiwara, A. ., & Zimmerman, N. M. (2012). Simulating Capacitances to Silicon Quantum Dots: Breakdown of the Parallel Plate Capacitor Model. Ieee Transactions on Nanotechnology, 11, 975–978. http://doi.org/10.1109/tnano.2012.2206826

Thorbeck, T. ., & Zimmerman, N. M. (2012). Determining the location and cause of unintentional quantum dots in a nanowire. Journal of Applied Physics, 111. http://doi.org/10.1063/1.3692387

Sarabi, B. ., Huang, P. H., & Zimmerman, N. M. (2019). Possible Hundredfold Enhancement in the Direct Magnetic Coupling of a Single-Atom Electron Spin to a Circuit Resonator. Physical Review Applied, 11. http://doi.org/10.1103/PhysRevApplied.11.014001

Ramanayaka, A. N., Kim, H. S., Hagmann, J. A., Murray, R. E., Tang, K. ., Meisenkothen, F. ., … Pomeroy, J. M. (2018). Towards superconductivity in p-type delta-doped Si/Al/Si heterostructures. Aip Advances, 8. http://doi.org/10.1063/1.5045338

Perron, J. K., Gullans, M. J., Taylor, J. M., Stewart, M. D., & Zimmerman, N. M. (2017). Valley blockade in a silicon double quantum dot. Physical Review B, 96. http://doi.org/10.1103/PhysRevB.96.205302 (Original work published November 2017)

Perron, J. K., Stewart, M. D., & Zimmerman, N. M. (2015). A quantitative study of bias triangles presented in chemical potential space. Journal of Physics-Condensed Matter, 27. http://doi.org/10.1088/0953-8984/27/23/235302

Perron, J. K., Stewart, M. D., & Zimmerman, N. M. (2016). A new regime of Pauli-spin blockade. Journal of Applied Physics, 119. http://doi.org/10.1063/1.4945393

Koppinen, P. J., Stewart, M. D., & Zimmerman, N. M. (2013). Fabrication and Electrical Characterization of Fully CMOS-Compatible Si Single-Electron Devices. Ieee Transactions on Electron Devices, 60, 78–83. http://doi.org/10.1109/ted.2012.2227322