In pursuit of superconductivity in p-type silicon (Si), we are using a single atomic layer of aluminum (Al) sandwiched between a Si substrate and a thin Si epi-layer. The delta layer was fabricated starting from an ultra high vacuum (UHV) flash anneal of Si(100) surface, followed by physical vapor deposition of Al monolayer. To activate the Al dopants, the sample was then annealed in-situ at 550 degrees C for 1 min. The Si capping layer was electron-beam evaporated in-situ at room temperature, followed by an exsitu anneal at 550 degrees C for 10 min to recrystallize the Si capping layer. Low temperature magnetotransport measurements yield a maximum hole mobility of 20 cm(2)/V/s at a carrier density 1.39 x 1014 holes/cm(2), which corresponds to approximate to (0.93 +/- 0.1) holes per dopant atom. No superconductivity was observed in these devices even at T < 300 mK. Atom probe tomography and energy-dispersive X-ray spectroscopy analyses suggest that the Al dopants become distributed over approximate to (17 to 25) nm thickness. Redistribution of Al dopants reduces Al atomic concentration in Si matrix below the critical density to observe superconductivity. (C) 2018 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license.